Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials Ingestion-build-205840 for general analytical purposes

Name: Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials Ingestion-build-205840 for general analytical purposes
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for general analytical purposes

the active oxygen in which can be determined separately from that in the perester itself (see annex A)

• Normative references

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials Ingestion-build-205840 for general analytical purposes1 Scope 1. 1 This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta layer reference materials.

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